| PART |
Description |
Maker |
| FLL351ME |
L-band medium & high power gaas FTEs
|
Fujitsu Component Limited.
Fujitsu Limited
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Microelectronics
|
| FLL107ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
|
| NE6510179A NE6510179A-T1 NE6510179 NE6510179A-A NE |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
|
California Eastern Labs
|
| FLL57MK |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLU10XM |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLU17XM |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL300IL-1 FLL300IL-2 |
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
|
Fujitsu Microelectronics
|
| CFK2062-P3 CFK2062-P3-000T |
1.8 to 2.0 GHz 30 dBm Power GaAs FET 1800 MHz - 2000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
SIEMENS AG
Mimix Broadband, Inc.
|
| XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器，QFN封装
|
Mimix Broadband, Inc.
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
